Browsing by Author "Adegboyega, G."

Now showing 1 - 1 of 1
  • No Thumbnail Available
    Item
    Open Access
    Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
    (Journal of vacuum science & technology B, 1997-06) Adegboyega, G.; Perez, I.V; Poggi, Antonella; Susi, E
    Deep level transient spectroscopy was used to detect the presence of deep levels correlated to the defects induced in the Si substrate by a CHF 3 /Ar dry etch of a 550 Å gate oxide as a function of the rf power. Several energy levels were observed; some of them were due to the processing before the dry etching. Three traps produced by the dry etching, with Arrhenius plot activation energies, respectively, E na1 =350  meV , E na2 =220  meV , and E na3 =100  meV , and capture cross sections around 10-20  cm 2 were detected. The correlation with the surface recombination velocity variations and the F and C diffusion in the Si substrate was investigated. © 1997 American Vacuum Society