Browsing by Author "Susi, E"

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    Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
    (Journal of vacuum science & technology B, 1997-06) Adegboyega, G.; Perez, I.V; Poggi, Antonella; Susi, E
    Deep level transient spectroscopy was used to detect the presence of deep levels correlated to the defects induced in the Si substrate by a CHF 3 /Ar dry etch of a 550 Å gate oxide as a function of the rf power. Several energy levels were observed; some of them were due to the processing before the dry etching. Three traps produced by the dry etching, with Arrhenius plot activation energies, respectively, E na1 =350  meV , E na2 =220  meV , and E na3 =100  meV , and capture cross sections around 10-20  cm 2 were detected. The correlation with the surface recombination velocity variations and the F and C diffusion in the Si substrate was investigated. © 1997 American Vacuum Society
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    The effects of oxygen precipitates on the electrical properties of silver impurities in p-type silicon
    (1996-07) Adegboyega, G.A; Passari, L; Butturri, M.A; Susi, E
    Some characteristics of the silver impurity in silicon with and without oxygen precipitates are studied by means of the four-point probe, minority carrier lifetime, and infra-red absorption spectroscopy measurements. The relative effect of varying contents of oxygen precipitate on the impurity is also investigated. Silver proved to be a donor-type impurity in p-type silicon and its presence led to a reduction, by up to a factor of 21, in the lifetime of the minority carriers by the formation of deep level traps. While the presence of oxygen precipitate in the substrate has little or no effect on the donor-type behaviour, it improved slightly the value of the minority carrier lifetime by gettering some of the Ag impurities and there appears to be a linear dependence of the improved lifetime on the quantity of precipitated oxygen.