Electrical properties of vacuum evaporated PbSnS 3 thin films
| dc.contributor.author | Kuku, T.A | |
| dc.contributor.author | Osasona, O. | |
| dc.contributor.author | Azi, Samuel | |
| dc.date.accessioned | 2023-05-13T17:46:47Z | |
| dc.date.available | 2023-05-13T17:46:47Z | |
| dc.date.issued | 2006-02 | |
| dc.description | International Journal of Materials Science,Volume No. 41,Issue No.4,Page No.1067-1071 | en_US |
| dc.description.abstract | Electrical conduction of evaporated PbSnS3 films of thickness ranging between 0.1 and 2.0 μm were studied by measuring the dc current in both parallel (planar) and transverse (cross plane) directions to the substrate surface. Conduction mechanisms relevant to various regions of the current-voltage characteristics are discussed. The obtained film conductivities were of the order 10−5 S cm−1 at room temperature and increased exponentially with increasing temperature. No consistent modification of the conductivity values and nature were observed when the films are doped with CdCl2, PbCl2 and CuI impurities. While planar conductivity activation energies were constant with voltage and increased slightly with deposition temperature, the cross plane values were found to depend on both voltage and film deposition temperature. | en_US |
| dc.identifier.issn | 10.1007/s10853-005-3641-9 | |
| dc.identifier.uri | https://ir.oauife.edu.ng/123456789/5477 | |
| dc.language.iso | en | en_US |
| dc.publisher | International Journal of Materials Science | en_US |
| dc.subject | transverse | en_US |
| dc.subject | energies | en_US |
| dc.subject | CuI impurities | en_US |
| dc.subject | substrate surface | en_US |
| dc.subject | planar conductivity | en_US |
| dc.title | Electrical properties of vacuum evaporated PbSnS 3 thin films | en_US |
| dc.type | Journal | en_US |