Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
| dc.contributor.author | Adegboyega, G. | |
| dc.contributor.author | Perez, I.V | |
| dc.contributor.author | Poggi, Antonella | |
| dc.contributor.author | Susi, E | |
| dc.date.accessioned | 2020-01-20T12:28:24Z | |
| dc.date.available | 2020-01-20T12:28:24Z | |
| dc.date.issued | 1997-06 | |
| dc.description | International Journal of vacuum science & technology B 15(3):623 - 628 | en_US |
| dc.description.abstract | Deep level transient spectroscopy was used to detect the presence of deep levels correlated to the defects induced in the Si substrate by a CHF <sub> 3 </sub> /Ar dry etch of a 550 Å gate oxide as a function of the rf power. Several energy levels were observed; some of them were due to the processing before the dry etching. Three traps produced by the dry etching, with Arrhenius plot activation energies, respectively, E<sub> na1 </sub>=350 meV , E<sub> na2 </sub>=220 meV , and E<sub> na3 </sub>=100 meV , and capture cross sections around 10<sup>-20</sup> cm <sup> 2 </sup> were detected. The correlation with the surface recombination velocity variations and the F and C diffusion in the Si substrate was investigated. © 1997 American Vacuum Society | en_US |
| dc.identifier.other | DOI: 10.1116/1.589304 | |
| dc.identifier.uri | https://ir.oauife.edu.ng/handle/123456789/5091 | |
| dc.language.iso | en | en_US |
| dc.publisher | Journal of vacuum science & technology B | en_US |
| dc.subject | transient spectroscopy | en_US |
| dc.subject | the dry etching | en_US |
| dc.subject | Arrhenius plot activation energies, | en_US |
| dc.title | Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma | en_US |
| dc.type | Journal | en_US |