Ion transport studies on vacuum deposited PbSnI 4 thin films
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Date
1999
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Thin Solid Films
Abstract
Thin films of the material PbSnI4 have been deposited by vacuum evaporation. The electrical conductivity, its activation energy and dielectric breakdown strength have been found to be film thickness dependent for films ≤5000 Å. Conductivity is by anionic defect motion with an activation energy of 0.320 eV and ionic transference number of 0.995 at room temperature. The ionic transport has been independently verified by an electrochemical cell potential method with the use of the material in an all thin film solid state battery of the configuration M/PbSnI4/(AgI,Ag), (M=Sn,Pb), giving OCV values close to the thermodynamic theoretical maximum for the formation of MI2 at the anode.
Description
International journalThin Solid Films Vol.340,No1.p.:292-296
Keywords
vacuum evaporation, he configuration M/PbSnI4/(AgI,Ag), (M=Sn,Pb),, the thermodynamic theoretical maximum, Electrochemical cell, Ionic transport