Ion transport studies on vacuum deposited PbSnI 4 thin films

dc.contributor.authorKuku, T.A
dc.date.accessioned2020-01-21T13:48:51Z
dc.date.available2020-01-21T13:48:51Z
dc.date.issued1999
dc.descriptionInternational journalThin Solid Films Vol.340,No1.p.:292-296en_US
dc.description.abstractThin films of the material PbSnI4 have been deposited by vacuum evaporation. The electrical conductivity, its activation energy and dielectric breakdown strength have been found to be film thickness dependent for films ≤5000 Å. Conductivity is by anionic defect motion with an activation energy of 0.320 eV and ionic transference number of 0.995 at room temperature. The ionic transport has been independently verified by an electrochemical cell potential method with the use of the material in an all thin film solid state battery of the configuration M/PbSnI4/(AgI,Ag), (M=Sn,Pb), giving OCV values close to the thermodynamic theoretical maximum for the formation of MI2 at the anode.en_US
dc.identifier.otherDOI: 10.1016/S0040-6090(98)00869-4
dc.identifier.urihttps://ir.oauife.edu.ng/handle/123456789/5119
dc.language.isoenen_US
dc.publisherThin Solid Filmsen_US
dc.subjectvacuum evaporationen_US
dc.subjecthe configuration M/PbSnI4/(AgI,Ag), (M=Sn,Pb),en_US
dc.subjectthe thermodynamic theoretical maximumen_US
dc.subjectElectrochemical cellen_US
dc.subjectIonic transporten_US
dc.titleIon transport studies on vacuum deposited PbSnI 4 thin filmsen_US
dc.typeJournalen_US
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