Preparation and characterization of MOCVD thin films of indium tin oxide
| dc.contributor.author | Akinwunmi, O.O | |
| dc.contributor.author | Eleruja, Marcus Adebola | |
| dc.contributor.author | Olowolafe, J.O | |
| dc.contributor.author | Adegboyega, G.A | |
| dc.date.accessioned | 2023-05-13T17:53:38Z | |
| dc.date.available | 2023-05-13T17:53:38Z | |
| dc.date.issued | 1999-11 | |
| dc.description | International journal Optical Materials Vol13,No2,p.255-259 | en_US |
| dc.description.abstract | Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacetonate (a single solid-source precursor). This study demonstrates that the properties of the as-deposited film depend on the deposition temperature. Films with a resistivity of , a visible transmission of over 80%, and a direct optical energy gap of 3.76 eV were deposited. | en_US |
| dc.identifier.other | DOI: 10.1016/S0925-3467(98)00089-5 | |
| dc.identifier.uri | https://ir.oauife.edu.ng/123456789/5528 | |
| dc.language.iso | en | en_US |
| dc.publisher | Optical Materials | en_US |
| dc.subject | metal acetylacetonate | en_US |
| dc.subject | a visible transmission | en_US |
| dc.subject | a direct optical energy gap | en_US |
| dc.subject | MOCVD thin films | en_US |
| dc.subject | indium tin oxide | en_US |
| dc.title | Preparation and characterization of MOCVD thin films of indium tin oxide | en_US |
| dc.type | Journal | en_US |