Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
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Date
1997-06
Journal Title
Journal ISSN
Volume Title
Publisher
Journal of vacuum science & technology B
Abstract
Deep level transient spectroscopy was used to detect the presence of deep levels correlated to the defects induced in the Si substrate by a CHF <sub> 3 </sub> /Ar dry etch of a 550 Å gate oxide as a function of the rf power. Several energy levels were observed; some of them were due to the processing before the dry etching. Three traps produced by the dry etching, with Arrhenius plot activation energies, respectively, E<sub> na1 </sub>=350 meV , E<sub> na2 </sub>=220 meV , and E<sub> na3 </sub>=100 meV , and capture cross sections around 10<sup>-20</sup> cm <sup> 2 </sup> were detected. The correlation with the surface recombination velocity variations and the F and C diffusion in the Si substrate was investigated. © 1997 American Vacuum Society
Description
International Journal of vacuum science & technology B 15(3):623 - 628
Keywords
transient spectroscopy, the dry etching, Arrhenius plot activation energies,